Ni Germano-Salicide Technology for High Performance MOSFETs

概要

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Ni salicide process is applied directly on poly-Si_<0.8>Ge_<0.2> gate, and MOSFETs utilizing Ni(Si_XGe_<1-X>/poly-Si_<0.8>Ge_<0.2> gate is fully characterized. The excellent value(〜5Ω/□) of sheet resistance is achieved from 0.15μm Ni(Si_XGe_<1-X>)/Si_<0.8>Ge_<0.2> gae, while Co salicide process applied on Si_<0.8>Ge_<0.2> gate results in R_s fail due to Ge segregation. With poly-Si_<0.8>Ge_<0.2> gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance(R_<sd>). Conclusively, Ni salicide is the exclusive process for successful germanosilicide of formation on poly-Si_<0.8>Ge_<0.2> gate without poly-Si buffer layer and Ni(Si_XGe_<1-X>)/poly-Si_<0.8>Ge_<0.2> gate can increase I_<dsat> of pMOSFETs by 20% as compared to conventional CoSi_2/poly-Si gate structure.
社団法人電子情報通信学会の論文
2001-06-28