Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_<μm> Technology

概要

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The integration issues of the application of HSQ as the non-etch back IMD of logic devices with W via plug were investigated.HSQ based IMD process could reduce the processing time of CMP by 33% compared to 03-TEOS USG based IMD with same global planarity.Degassing process at 550℃ was necessary to obtain the reliable via contact resistance with high temperature storage (HTS) test at 350℃ for 300 hours.Using HSQ in IMD, the parasitic capacitance decreased by 20% compared to that of 03-TEOS USG based IMD. The parasitic capacitance of HSQ was nearly the same as before and after thermal stressing at 350℃ for 300 hours. When HSQ was used as IMD material, the characteristics of transistor and time zero dielectric breakdown voltage(TZDB)exhibited equivalent to those of O3-TEOS USG based IMD.We could successfully integrate the 3-level metallization structure with HSQ in IMD for 0.35_<μm> logic devices.
社団法人電子情報通信学会の論文
1998-07-24