KANG Ho-Kyu | Process Development Team, Semiconductor R&D Division, Samsung Electronics Co.

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著作論文

Enhanced Retention Characteristics of Pb(Zr, Ti)O_3 Capacitors by Ozone Treatment : Electrical Properties of Condensed Matter
Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems
Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_ Technology
Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology
A Study on the Germano-Silicide Formation in the Ni/Si_Ge_x System for CMOS Device Applications

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