Kim Byung-Jun | Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.
スポンサーリンク
概要
関連著者
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Lee M‐y
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee M‐y
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Myoung-bum
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KANG Ho-Kyu
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co.
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LEE Moon-Yong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co.ltd.
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SHIN Hong-Jae
Process Development Team, Semiconductor R&D center, Samsung Electronics
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Shin Hong-jae
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Moon-yong
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Park Hee-Sook
Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Kim Byung-Jun
Process Development, Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Park Hee-sook
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Byung-jun
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
著作論文
- Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_ Technology
- Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology