Kang Ho-kyu | Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.

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著作論文

Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems
Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications
The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
Fast EM Evaluation by Highly Accelerated Current Density
Fast EM Evaluation by Highly Accelerated Current Density
Fast EM Evaluation by Highly Accelerated Current Density
Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_ Technology
Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology
A Study on the Germano-Silicide Formation in the Ni/Si_Ge_x System for CMOS Device Applications
Deposition and Electrical Characterization of Very Thin SrTiO_3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
Electrical Characterizations of Pt/(Ba,Sr)TiO_3/Pt Planar Capacitors for ULSI DRAM Applications
W-Plug Common Contact with CoSi_2 Ohmic Layer for Scaled DRAM and Merged DRAM in Logic (MDL) Devices
Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor
Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor
Ni Germano-Salicide Technology for High Performance MOSFETs
Ni Germano-Salicide Technology for High Performance MOSFETs

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