Lee Sang-in | Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.

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著作論文

Challenge to 0.13μm Device Patterning using KrF
Challenge to 0.13μm Device Patterning using KrF
Challenge to 0.13μm Device Patterning using KrF
Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals
Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method
Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
Fast EM Evaluation by Highly Accelerated Current Density
Fast EM Evaluation by Highly Accelerated Current Density
Fast EM Evaluation by Highly Accelerated Current Density
Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
The Origin of Micro-Loading Effect of TEOS-O3 Oxide II

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