The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
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概要
- 論文の詳細を見る
High-dielectric BST capacitors for Giga-bit DRAM applications were fabricated in a concave-type integration structure. As an electrode material, Pt was deposited by a DC magnetron sputtering method on the patterned TiO_2/SiO_2/Si substrate. Thin BST films were deposited by both the sputtering and MOCVD method using the LDS system. The oxide storage holes were patterned by the reverse photo of normal stacked nodes. All as-deposited capacitors were annealed at 650℃ in a less oxygen atmosphere. Electrical properties such as capacitance, leakage current were measured. It was observed that there was the limitation of sputtered BST capacitors as the storage holes deepen. However, CVD BST capacitors had good step coverage and electrical properties regardless of the storage hole depths.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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Lim Han-jin
Semiconductor R&d Center Samsung Electronics Co.
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Kim Wan-don
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-In
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Yoo C‐y
Samsung Electronics Co. Ltd. Gyeonggi‐do Kor
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Park Hong-Bae
Semiconductor R&D Center, Samsung Electronics Co.
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Kang Chang-Seok
Semiconductor R&D Center, Samsung Electronics Co.
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Hwang Doo-Sup
Semiconductor R&D Center, Samsung Electronics Co.
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Lee Byoung-Taek
Semiconductor R&D Center, Samsung Electronics Co.
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Kim Wan-Don
Semiconductor R&D Center, Samsung Electronics Co.
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Horii Hideki
Semiconductor R&D Center, Samsung Electronics Co.
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Yoo Cha-Young
Semiconductor R&D Center, Samsung Electronics Co.
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Park Young-Wook
Semiconductor R&D Center, Samsung Electronics Co.
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Park Hong-bae
Semiconductor R&d Center Samsung Electronics Co.
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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Lee Sang-in
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Kang Chang-seok
Semiconductor R&d Center Samsung Electronics Co.
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Kang Chang-seok
Semiconductor R&d Center Memory Business Samsung Electronics Co. Ltd.
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Park Young-wook
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Yoo Cha-young
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Lee Byoung-taek
Semiconductor R&d Center Samsung Electronics Co.
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Horii Hideki
Semiconductor R&d Center Samsung Electronics Co.
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Hwang Doo-sup
Semiconductor R&d Center Samsung Electronics Co.
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