Fast EM Evaluation by Highly Accelerated Current Density
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概要
- 論文の詳細を見る
A conventional electromigration (EM) test takes considerably long time because of its limited accelerating condition. Moreover, a process feedback in response to change of integration process, such as the type of metallization stack or intermetallic dielectric (IMD) is rather slow. For the quick turnaround, we evaluated a FAST EM test in which high current density was applied to Al-Cu interconnects as an accelerating factor. From the trend of activation energy (Q), current density factor (n), joule heating, and failure behavior as a function of current density, the current densities lower than 10 MA/cm^2 were found to provide the same failure mechanism as that of a conventional test performed with a current density of 〜2 MA/cm^2. For a general application of this fast EM test, the corresponding joule heating was chosen as a criterion of the limit of current density. The fast EM method with highly accelerated current densities was proved to be a powerful tool in evaluating EM quality in a relatively short time.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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Lee Sang-In
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Kwon Dong-chul
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S‐i
Process Development Team Semiconductor R&d Center Samsung Electronics
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Lee Sang-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Ajou Univ. Suwon Kor
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Lee Sang-in
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang-in
Memory Business Division Samsung Electronics Inc.
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Lee Sang-in
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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LEE Hyeon-Deok
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KANG Ho-Kyu
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee H‐d
Korea Res. Inst. Standards And Sci. Taejon Kor
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Wee Young-Jin
Semiconductor R&D Center, Samsung Electronics Co. LTD.
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Park Yun-Ho
Semiconductor R&D Center, Samsung Electronics Co. LTD.
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Lee Soo
Process Development Team Semiconductor R&d Center Samsung Electronics
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Wee Young-jin
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Yun-ho
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Lee H‐j
Process Development Team Semiconductor R&d Center Samsung Electronics
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