The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
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概要
- 論文の詳細を見る
The fluorine-doped silicon oxide (SiOF) as a low dielectric material is formed by high density plasma (HDP) chemical vapor deposition (CVD) method using SiH4, SiF4, O2 and Ar as source gases. We studied the reaction mechanism of HDP-SiOF film formation, and evaluated the gap-fill characteristics and parasitic capacitance between metal lines for inter-metal dielectric (IMD) application. SiF4 gas is not only source of Si-F bond in SiOF film but also have in-situ chemically etching characteristics. In case of insufficient amount of O_2 flux, the unstable Si-F_2 bonds were formed in the HDP-SiOF film. The dielectric constant of HDP-SiOF film could be reduced by 23% compared to fhat of PE-TEOS oxide film. Using HDP-SiOF film as gap-filling material in IMD, the gap was completely filled at the aspec ratio below 2.0 and the parasitic capacitance between metal lines could be reduced by 15% compared to that of USG process.
- 社団法人電子情報通信学会の論文
- 1997-07-24
著者
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Kim Sung-jin
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee M‐y
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee M‐y
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Myoung-bum
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Choi J‐h
Hyundai Electronics Ind. Co. Ltd. Kyoungki‐do Kor
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co.ltd.
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Kim Sang-jin
Division Of Bioscience And Biotechnology Woosuk University
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KANG Ho-Kyu
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Shin Hong-jae
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Moon-yong
Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Shin Hong-Jae
Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Choi Ji-Hyun
Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Hwang Byung-Kun
Semiconductor R&D Center, Samsung Electronics Co., LTD.
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Hwang Byung-kun
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Choi Ji-Hyun
Semiconductor R&D Center, Samsung Electronics Co., LTD.
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