Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films

スポンサーリンク

概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-01-01

著者

• Lee M‐y

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Lee M‐y

  Semiconductor R & D Center Samsung Electronics Co. Ltd.

• Lee Myoung-bum

  Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Kim S‐t

  Samsung Electronics Co. Ltd. Gyeonggi‐do Kor

• Kim Sung-tae

  Semiconductor R & D Center Samsung Electronics Co. Ltd.:department Of Materials Science And Engi

• Lee W‐j

  Sejong Univ. Seoul Kor

• Lee Moon-yong

  Semiconductor R & D Center Samsung Electronics Co.ltd.

• Kim H‐h

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• KIM Hyun-Ho

  Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology

• LEE Won-Jong

  Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology

• KIM Sung-Tae

  Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology

• Lee Moon-yong

  Semiconductor R & D Center Samsung Electronics Co. Ltd.

• Lee W‐j

  Department Of Advanced Materials Engineering Sejong University

• Kim Hyun-ho

  Department Of Materials Science And Engineering Kaist

• Lee Won-jong

  Department Of Computer Science Yonsei University

関連論文

• Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
• Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
• Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
• Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
• Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
• Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
• Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemtical Vapor Deposition System
• Structural and Electrical Properties of Lead-Zirconate-Titanate Thin Films Prepared by Multitarget Reactive DC Magnetron Cosputtering
• Electrical Properties of CuPc Films Prepared by Plasma-Activated Evaporation in N_2 and NO_x Environments
• Annealing of RuO_2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO_3 Thin Films
• An Effective Load Balancing Scheme for 3D Texture-Based Sort-Last Parallel Volume Rendering on GPU Clusters
• Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH_2Cl_2 and O_3 as the Precursors
• Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
• Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
• Effects of the Annealing in Ar and H_2/Ar Ambients on the Microstructure and the Electrical Resistivity of the Copper Film Prepared by Chemical Vapor Deposition
• The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
• The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
• The Effects of the Preparation Conditions and Heat-Treatment Conditions of Pt/Ti/SiO_2/Si Substrates on the Nucleation and Growth of Pb(Zr, Ti)O_3 Films
• Effect of LaNiO_3 Top Electrode on the Resistance of Pb(Zr,Ti)O_3 Ferroelectric Capacitor to Hydrogen Damage and Fatigue
• Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
• Integration of Hydrogen Silsesquioxane(HSQ) as an Intermetal Dielectric(IMD)Material for 0.35_ Technology
• Integration of Hydrogen Silsesquioxane (HSQ) as an Intermetal Dielectric (IMD) Material for 0.35μm Technology
• W-Plug Common Contact with CoSi_2 Ohmic Layer for Scaled DRAM and Merged DRAM in Logic (MDL) Devices
• Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor
• Application of PECVD-WNx Electrode for Ta_2O_5 Capacitor
• Effect of a TiO_2 Buffer Layer on the C-V Properties of Pt/PbTiO_3/TiO_2/Si Structure
• Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
• The Effects of Substrate Temperature and Lead Precursor Flow Rate on the Fabrication of (Pb,La)(Zr,Ti)O_3 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
• Fabrication of Perovskite (Pb,La)(Zr,Ti)0_3 Thin Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory
• Effects of Seed Layers on the Characteristics of (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• Effects of Electrodes on the Electric Properties of Pb(Zr, Ti)O_3 Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
• Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
• Low Temperature Nucleation of the Perovskite Phase in the Deposition of Pb(Zr,Ti)0_3 Films on the Pt/SiO_2/Si Substrate by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• Electrical Properties and Crystal Structure of (Ba_Sr_)TiO_3 Thin Films Prepared on Pt/SiO_2/Si by RF Magnetron Sputtering
• Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
• The Origin of Micro-Loading Effect of TEOS-O3 Oxide II
• Auger Electron Spectroscopy Quantitative Analysis of Interfacial SiO_2 Layer
• Preparation and Characterization of Pb(Zr,Ti)O_3 Films Deposited on Pt/RuO_2 Hybrid Electrode for Ferroelectric Random Access Memory Devices : Surfaces, Interfaces, and Films
• Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition
• Dry Etching Characteristics of Pb(Zr,Ti)O3 Films in CF4 and Cl2/CF4 Inductively Coupled Plasmas
• Theoretical Composition Calibration and Thickness Measurement in the Analysis of Multielement Thin Films Using Wavelength Dispersive Spectroscopy : Applications to Lead Zirconate Titanate Thin Films
• Phase Change Characteristics of InxSb40-xTe60 Chalcogenide Alloy for Phase Change Random Access Memory
• Reactive Ion Etching Mechanism of Copper Film in Chlorine-based Electron Cyclotron Resonance Plasma
• Effect of Added Metallic Elements in Ag Alloys on the Durability against Heat and Humidity of Indium Zinc Oxide/Ag Alloy/Indium Zinc Oxide Transparent Conductive Multilayer System
• Effect of Gas Composition on TiN Thin-Film Fabrication in N_2/H_2/Ar/TiCl_4 Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition System : Semiconductors
• Relaxation of Remanent Polarization in Pb(Zr,Ti)O_3 Thin Film Capacitors
• Transformer Coupled Plasma Enhanced Metal Organic Chemical Vapor Deposition of Ta(Si)N Thin Films and Their Cu Diffusion Barrier Properties
• Reactive Ion Etching Mechanism of RuO2 Thin Films in Oxygen Plasma with the Addition of CF4, Cl2, and N2
• Enhancement of Adhesion Strength of Electroless-Plated Ni Under Bump Metallurgy by Introduction of Inductively Coupled Plasma Enhanced Bias Sputtering Ni Seed Layer
• Effects of Added Metallic Elements in Ag-Alloys on Properties of Indium–Tin-Oxide/Ag-Alloy/Indium–Tin-Oxide Transparent Conductive Multilayer System
• Modeling of Hysteresis Curves of Ferroelectric Capacitor with Inhomogeneous Charged Defect Density and Polarization Parameters in the Ferroelectric Film
• Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
• Thermochemical Stability of IrO2 Bottom Electrodes in Direct-Liquid-Injection Metalorganic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Films
• The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios
• Adhesion and Diffusion Barrier Properties of Ta Films Fabricated by Auxiliary Plasma Assisted Bias Sputtering
• Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition System
• (Pb,La)(Zr,Ti)O3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory

もっと見る 閉じる

スポンサーリンク