Phase Change Characteristics of In_xSb_40-xTe₆₀ Chalcogenide Alloy for Phase Change Random Access Memory

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概要

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• The In_xSb_40-xTe₆₀ alloy was selected as a new alternative phase change material for Ge₂Sb₂Te₅ (GST) for phase change random access memory (PRAM). The crystal structure of In_xSb_40-xTe₆₀ was an $\alpha$(Sb₂Te₃) rhombohedral ($a=b=c$, $\alpha=\beta=\gamma \neq 90$°) single phase with identical lattice parameters in a wide composition range of In (0--28 at. %). The crystallization temperature and melting point of In_xSb_40-xTe₆₀ were in the ranges of 149--219 °C and 608--614 °C, respectively, and similar to those of GST. The electric properties of In_xSb_40-xTe₆₀ with a wide composition range of In contents showed the typical PRAM properties such as current--voltage ($I$--$V$), resistance--voltage ($R$--$V$), and switching behavior. The reset current of In_xSb_40-xTe₆₀ decreased with increasing In content and the low power consumption and good retention can be realized by controlling In content. The ratio of the cell resistance and sheet resistance of amorphous In_xSb_40-xTe₆₀ to those crystalline In_xSb_40-xTe₆₀ were almost the same as or larger than those of GST. The cycling endurance test of In_xSb_40-xTe₆₀ with a wide range of In contents showed the comparable results to GST. In_xSb_40-xTe₆₀ was concluded to be a very promising phase change material for PRAM.

• 2011-07-25

著者

• Lee Won-jong

  Department Of Computer Science Yonsei University

• Lee Won-Jong

  Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea

• Yun Jae-Jin

  Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea

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