Effect of Gas Composition on TiN Thin-Film Fabrication in N_2/H_2/Ar/TiCl_4 Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition System : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る

• TiN films were deposited in a N_2/H_2/Ar/TiCl_4 rf inductively coupled plasma and the effect of gas composition on the properties of the TiN films were analyzed through investigation of the plasmas with a Langmuir single probe and a mass spectrometer. The quality of TiN films depended critically on the concentration of H and N radicals. H_2 had the effect of removing Cl from the TiCl_4 and reducing N radicals in the plasma although the plasma density and electron temperature were not significantly affected. Accordingly, high-quality TiN films with low Cl content and good electric properties were obtained with 10 - 20% of H_2. With the addition of Ar, the plasma density increased and the dissociation of the precursors was enhanced; as a result, the production of N and H radicals was enhanced and the quality of TiN films was improved.

• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Jang Seong-soo

  Department Of Materials Science And Engineering Korean Advanced Institute Of Science And Technology

• Lee Won-jong

  Department Of Computer Science Yonsei University

• Lee Won-jong

  Department Of Materials Science And Engineering Korean Advanced Institute Of Science And Technology

関連論文

• Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
• Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
• Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
• Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemtical Vapor Deposition System
• Electrical Properties of CuPc Films Prepared by Plasma-Activated Evaporation in N_2 and NO_x Environments
• An Effective Load Balancing Scheme for 3D Texture-Based Sort-Last Parallel Volume Rendering on GPU Clusters
• The Effects of the Preparation Conditions and Heat-Treatment Conditions of Pt/Ti/SiO_2/Si Substrates on the Nucleation and Growth of Pb(Zr, Ti)O_3 Films
• Effect of LaNiO_3 Top Electrode on the Resistance of Pb(Zr,Ti)O_3 Ferroelectric Capacitor to Hydrogen Damage and Fatigue
• Effect of a TiO_2 Buffer Layer on the C-V Properties of Pt/PbTiO_3/TiO_2/Si Structure
• Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
• The Effects of Substrate Temperature and Lead Precursor Flow Rate on the Fabrication of (Pb,La)(Zr,Ti)O_3 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
• Fabrication of Perovskite (Pb,La)(Zr,Ti)0_3 Thin Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory
• Effects of Seed Layers on the Characteristics of (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• Effects of Electrodes on the Electric Properties of Pb(Zr, Ti)O_3 Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• Low Temperature Nucleation of the Perovskite Phase in the Deposition of Pb(Zr,Ti)0_3 Films on the Pt/SiO_2/Si Substrate by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
• Auger Electron Spectroscopy Quantitative Analysis of Interfacial SiO_2 Layer
• Preparation and Characterization of Pb(Zr,Ti)O_3 Films Deposited on Pt/RuO_2 Hybrid Electrode for Ferroelectric Random Access Memory Devices : Surfaces, Interfaces, and Films
• Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition
• Dry Etching Characteristics of Pb(Zr,Ti)O3 Films in CF4 and Cl2/CF4 Inductively Coupled Plasmas
• Theoretical Composition Calibration and Thickness Measurement in the Analysis of Multielement Thin Films Using Wavelength Dispersive Spectroscopy : Applications to Lead Zirconate Titanate Thin Films
• Phase Change Characteristics of InxSb40-xTe60 Chalcogenide Alloy for Phase Change Random Access Memory
• Reactive Ion Etching Mechanism of Copper Film in Chlorine-based Electron Cyclotron Resonance Plasma
• Effect of Added Metallic Elements in Ag Alloys on the Durability against Heat and Humidity of Indium Zinc Oxide/Ag Alloy/Indium Zinc Oxide Transparent Conductive Multilayer System
• Effect of Gas Composition on TiN Thin-Film Fabrication in N_2/H_2/Ar/TiCl_4 Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition System : Semiconductors
• Relaxation of Remanent Polarization in Pb(Zr,Ti)O_3 Thin Film Capacitors
• Transformer Coupled Plasma Enhanced Metal Organic Chemical Vapor Deposition of Ta(Si)N Thin Films and Their Cu Diffusion Barrier Properties
• Reactive Ion Etching Mechanism of RuO2 Thin Films in Oxygen Plasma with the Addition of CF4, Cl2, and N2
• Enhancement of Adhesion Strength of Electroless-Plated Ni Under Bump Metallurgy by Introduction of Inductively Coupled Plasma Enhanced Bias Sputtering Ni Seed Layer
• Effects of Added Metallic Elements in Ag-Alloys on Properties of Indium–Tin-Oxide/Ag-Alloy/Indium–Tin-Oxide Transparent Conductive Multilayer System
• Modeling of Hysteresis Curves of Ferroelectric Capacitor with Inhomogeneous Charged Defect Density and Polarization Parameters in the Ferroelectric Film
• Thermochemical Stability of IrO2 Bottom Electrodes in Direct-Liquid-Injection Metalorganic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Films
• The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios
• Adhesion and Diffusion Barrier Properties of Ta Films Fabricated by Auxiliary Plasma Assisted Bias Sputtering
• Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition System
• (Pb,La)(Zr,Ti)O3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory

もっと見る 閉じる

スポンサーリンク