Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition

概要

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Highly c-axis oriented AlN films were fabricated on various substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a substrate temperature of 500℃. The degree of c-axis orientation depends sensitively on the substrate: the standard deviations o of AlN(0002) rocking curve peaks are 4.9°, 4.8°, 4.3°, 4.0°and 1.5°on SiO_2, Si_3N_4, Si(100), Si(111) and α-Al_2O_3(0001) substrates, respectively. The amorphous interfacial silicon oxide layer on Si substrate has an important effect on the degree of c-axis orientation and in-plane alignment of the AlN film. The AlN films prepared by ECR PECVD have much lower surface roughness (R_<RMS> = 1.1-1,9 nm) than the sputter-deposited films (R_<RMS> = 3.0-9.0 nm), which offers lower propagation loss in SAW devices.
社団法人応用物理学会の論文
1996-11-15