Effect of Added Metallic Elements in Ag Alloys on the Durability against Heat and Humidity of Indium Zinc Oxide/Ag Alloy/Indium Zinc Oxide Transparent Conductive Multilayer System
スポンサーリンク
概要
- 論文の詳細を見る
We studied the effects of added metallic elements in the Ag alloy layers of the indium zinc oxide (IZO)/Ag alloy/IZO transparent conductive multilayer system on the optical and electrical properties of the multilayer. The correlation between the thickness of the Ag alloy layers and the optical and electrical properties of the multilayer was also investigated. The transmittance and sheet resistance were estimated from the optical constants and specific resistivities of Ag alloy and IZO, and then compared with the experimentally measured values. A high transmittance of 95.3% at a 550 nm wavelength and a low sheet resistance of 4.3 $\Omega$/$\square$ were achieved from the IZO (40 nm)/Ag (15 nm)/IZO (40 nm) multilayer. The effect of added metallic elements in the Ag alloy layers of the multilayer on the durability against heat and humidity was also investigated. The durability against heat was improved by the added metallic elements in the Ag alloy layers of the IZO/Ag/IZO multilayer system. When Ag film was heat-treated, agglomeration occurred owing to the surface diffusion of Ag atoms. The added metallic elements such as Pd, Cu, and Au increased the onset temperature and the activation energy for agglomeration. The optical and electrical properties of the IZO/Ag/IZO multilayer markedly deteriorated after the humidity test at 85 °C–85% relative humidity (RH) in air. The degradation of Ag alloy layer was due to the combined effect of heat, water vapor, and sulfur in air. However the deterioration did not occur in the IZO/Ag alloy/IZO multilayer with a AgAu layer after the humidity test. The IZO/Ag alloy/IZO multilayer with the AgAu layer containing 10 wt % Au especially exhibited superior characteristics with a high transmittance of 93.5% at a 550 nm wavelength and a low sheet resistance of 6.3 $\Omega$/$\square$ after the humidity test at 85 °C–85% RH in air for 720 h.
- 2010-11-25
著者
-
Lee Won-jong
Department Of Computer Science Yonsei University
-
Cho Sun-Hee
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
関連論文
- Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
- Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
- Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
- Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemtical Vapor Deposition System
- Electrical Properties of CuPc Films Prepared by Plasma-Activated Evaporation in N_2 and NO_x Environments
- An Effective Load Balancing Scheme for 3D Texture-Based Sort-Last Parallel Volume Rendering on GPU Clusters
- The Effects of the Preparation Conditions and Heat-Treatment Conditions of Pt/Ti/SiO_2/Si Substrates on the Nucleation and Growth of Pb(Zr, Ti)O_3 Films
- Effect of LaNiO_3 Top Electrode on the Resistance of Pb(Zr,Ti)O_3 Ferroelectric Capacitor to Hydrogen Damage and Fatigue
- Effect of a TiO_2 Buffer Layer on the C-V Properties of Pt/PbTiO_3/TiO_2/Si Structure
- Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- The Effects of Substrate Temperature and Lead Precursor Flow Rate on the Fabrication of (Pb,La)(Zr,Ti)O_3 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Perovskite (Pb,La)(Zr,Ti)0_3 Thin Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory
- Effects of Seed Layers on the Characteristics of (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- Effects of Electrodes on the Electric Properties of Pb(Zr, Ti)O_3 Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- Low Temperature Nucleation of the Perovskite Phase in the Deposition of Pb(Zr,Ti)0_3 Films on the Pt/SiO_2/Si Substrate by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- Auger Electron Spectroscopy Quantitative Analysis of Interfacial SiO_2 Layer
- Preparation and Characterization of Pb(Zr,Ti)O_3 Films Deposited on Pt/RuO_2 Hybrid Electrode for Ferroelectric Random Access Memory Devices : Surfaces, Interfaces, and Films
- Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition
- Dry Etching Characteristics of Pb(Zr,Ti)O3 Films in CF4 and Cl2/CF4 Inductively Coupled Plasmas
- Theoretical Composition Calibration and Thickness Measurement in the Analysis of Multielement Thin Films Using Wavelength Dispersive Spectroscopy : Applications to Lead Zirconate Titanate Thin Films
- Phase Change Characteristics of InxSb40-xTe60 Chalcogenide Alloy for Phase Change Random Access Memory
- Reactive Ion Etching Mechanism of Copper Film in Chlorine-based Electron Cyclotron Resonance Plasma
- Effect of Added Metallic Elements in Ag Alloys on the Durability against Heat and Humidity of Indium Zinc Oxide/Ag Alloy/Indium Zinc Oxide Transparent Conductive Multilayer System
- Effect of Gas Composition on TiN Thin-Film Fabrication in N_2/H_2/Ar/TiCl_4 Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition System : Semiconductors
- Relaxation of Remanent Polarization in Pb(Zr,Ti)O_3 Thin Film Capacitors
- Transformer Coupled Plasma Enhanced Metal Organic Chemical Vapor Deposition of Ta(Si)N Thin Films and Their Cu Diffusion Barrier Properties
- Reactive Ion Etching Mechanism of RuO2 Thin Films in Oxygen Plasma with the Addition of CF4, Cl2, and N2
- Enhancement of Adhesion Strength of Electroless-Plated Ni Under Bump Metallurgy by Introduction of Inductively Coupled Plasma Enhanced Bias Sputtering Ni Seed Layer
- Effects of Added Metallic Elements in Ag-Alloys on Properties of Indium–Tin-Oxide/Ag-Alloy/Indium–Tin-Oxide Transparent Conductive Multilayer System
- Modeling of Hysteresis Curves of Ferroelectric Capacitor with Inhomogeneous Charged Defect Density and Polarization Parameters in the Ferroelectric Film
- Thermochemical Stability of IrO2 Bottom Electrodes in Direct-Liquid-Injection Metalorganic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Films
- The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios
- Adhesion and Diffusion Barrier Properties of Ta Films Fabricated by Auxiliary Plasma Assisted Bias Sputtering
- Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition System
- (Pb,La)(Zr,Ti)O3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory