Auger Electron Spectroscopy Quantitative Analysis of Interfacial SiO_2 Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-07-15
著者
-
LEE Won-Jong
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
-
Lee W‐j
Department Of Advanced Materials Engineering Sejong University
-
Lee Won-jong
Department Of Computer Science Yonsei University
-
SOH Ju-Won
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
-
Soh J‐w
Korea Advanced Inst. Sci. And Technol. Taejon Kor
-
Soh Ju-won
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
関連論文
- Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
- Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
- Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
- Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemtical Vapor Deposition System
- Electrical Properties of CuPc Films Prepared by Plasma-Activated Evaporation in N_2 and NO_x Environments
- An Effective Load Balancing Scheme for 3D Texture-Based Sort-Last Parallel Volume Rendering on GPU Clusters
- Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH_2Cl_2 and O_3 as the Precursors
- Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
- Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
- Effects of the Annealing in Ar and H_2/Ar Ambients on the Microstructure and the Electrical Resistivity of the Copper Film Prepared by Chemical Vapor Deposition
- The Effects of the Preparation Conditions and Heat-Treatment Conditions of Pt/Ti/SiO_2/Si Substrates on the Nucleation and Growth of Pb(Zr, Ti)O_3 Films
- Effect of LaNiO_3 Top Electrode on the Resistance of Pb(Zr,Ti)O_3 Ferroelectric Capacitor to Hydrogen Damage and Fatigue
- Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
- Effect of a TiO_2 Buffer Layer on the C-V Properties of Pt/PbTiO_3/TiO_2/Si Structure
- Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- The Effects of Substrate Temperature and Lead Precursor Flow Rate on the Fabrication of (Pb,La)(Zr,Ti)O_3 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
- Fabrication of Perovskite (Pb,La)(Zr,Ti)0_3 Thin Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory
- Effects of Seed Layers on the Characteristics of (Pb,La)(Zr,Ti)O_3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- Effects of Electrodes on the Electric Properties of Pb(Zr, Ti)O_3 Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- Low Temperature Nucleation of the Perovskite Phase in the Deposition of Pb(Zr,Ti)0_3 Films on the Pt/SiO_2/Si Substrate by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
- Auger Electron Spectroscopy Quantitative Analysis of Interfacial SiO_2 Layer
- Preparation and Characterization of Pb(Zr,Ti)O_3 Films Deposited on Pt/RuO_2 Hybrid Electrode for Ferroelectric Random Access Memory Devices : Surfaces, Interfaces, and Films
- Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition
- Dry Etching Characteristics of Pb(Zr,Ti)O3 Films in CF4 and Cl2/CF4 Inductively Coupled Plasmas
- Theoretical Composition Calibration and Thickness Measurement in the Analysis of Multielement Thin Films Using Wavelength Dispersive Spectroscopy : Applications to Lead Zirconate Titanate Thin Films
- Phase Change Characteristics of InxSb40-xTe60 Chalcogenide Alloy for Phase Change Random Access Memory
- Reactive Ion Etching Mechanism of Copper Film in Chlorine-based Electron Cyclotron Resonance Plasma
- Effect of Added Metallic Elements in Ag Alloys on the Durability against Heat and Humidity of Indium Zinc Oxide/Ag Alloy/Indium Zinc Oxide Transparent Conductive Multilayer System
- Effect of Gas Composition on TiN Thin-Film Fabrication in N_2/H_2/Ar/TiCl_4 Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition System : Semiconductors
- Relaxation of Remanent Polarization in Pb(Zr,Ti)O_3 Thin Film Capacitors
- Transformer Coupled Plasma Enhanced Metal Organic Chemical Vapor Deposition of Ta(Si)N Thin Films and Their Cu Diffusion Barrier Properties
- Reactive Ion Etching Mechanism of RuO2 Thin Films in Oxygen Plasma with the Addition of CF4, Cl2, and N2
- Enhancement of Adhesion Strength of Electroless-Plated Ni Under Bump Metallurgy by Introduction of Inductively Coupled Plasma Enhanced Bias Sputtering Ni Seed Layer
- Effects of Added Metallic Elements in Ag-Alloys on Properties of Indium–Tin-Oxide/Ag-Alloy/Indium–Tin-Oxide Transparent Conductive Multilayer System
- Modeling of Hysteresis Curves of Ferroelectric Capacitor with Inhomogeneous Charged Defect Density and Polarization Parameters in the Ferroelectric Film
- Thermochemical Stability of IrO2 Bottom Electrodes in Direct-Liquid-Injection Metalorganic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Films
- The Effect of Plasma Treatment on Adsorbed Iodine as a Catalyst in Chemical Vapor Deposition of Copper and Application to Filling of Deep Trenches with High Aspect Ratios
- Adhesion and Diffusion Barrier Properties of Ta Films Fabricated by Auxiliary Plasma Assisted Bias Sputtering
- Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition System
- (Pb,La)(Zr,Ti)O3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition for the Charge Storage Capacitor of a Gigabit-scale Dynamic Random Access Memory