Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices

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A Study on Therlnal Stability of CoSi_2 Elnploying Novel Flne-Gralned PolycryStalline Silicon/CoSi_2/Si (001) System : Semiconductors
Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices
Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
Composition Control of Lead Zirconate Titanate Thin Films in Electron Cyclotron Resonance Plasma Enhanced Chemtical Vapor Deposition System
Annealing of RuO_2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO_3 Thin Films
Dielectric Properties of Hydrogen Silsesquioxane Films Degraded by Heat and Plasma Treatment
Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH_2Cl_2 and O_3 as the Precursors
Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
Study of Bump Formation in Integrated Chemical Vapor Deposition-Physical Vapor Deposition Aluminum Filling Process
Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
Improvement of Reverse Leakage Current by Fluorine Implantation in n^+/p Shallow Junctions Diffused from a Cobalt Silicide Layer
Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
Effects of the Annealing in Ar and H_2/Ar Ambients on the Microstructure and the Electrical Resistivity of the Copper Film Prepared by Chemical Vapor Deposition
Ferroelectric Properties of Nb-Doped Bi_4 Ti-3O_ Thin Films Prepared Using Surfactant in Acid or Basic Atmosphere
Ferroelectric Properties of Tungsten-Substituted Bi_4Ti_3O_ Thin Film Prepared by Sol-Gel Method
Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)
Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
Suppression of Arsenic Loss by Phosphorus Co-Implantation in n^+/p Shallow Junction Diffused from a CoSi_2 Layer
The study on the sidewall films formed during Si trench etching in Cl_2/HBr based plasmas
The study on the sidewall films formed during Si trench etching in Cl_2/HBr based plasmas
The study on the sidewall films formed during Si trench etching in Cl_2/HBr based plasmas
The Property of Ta_2O_5 On Chemical Vapor Deposited Ru Film Fabricated using Tris (2,4-Octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor : Semiconductors
GaN-Based White-Light-Emitting Diodes Fabricated with a Mixture of Ba_3MgSi_2O_8 : Eu^ and Sr_2SiO_4 : Eu^ Phosphors
Comparative Study of Hydrido Organo Siloxane Polymer and Hydrogen Silsesquioxane
Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
Low Temperature Nucleation of the Perovskite Phase in the Deposition of Pb(Zr,Ti)0_3 Films on the Pt/SiO_2/Si Substrate by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition
Electrical Properties and Crystal Structure of (Ba_Sr_)TiO_3 Thin Films Prepared on Pt/SiO_2/Si by RF Magnetron Sputtering
Auger Electron Spectroscopy Quantitative Analysis of Interfacial SiO_2 Layer
New Resistive Layer Structure for Field Emission Display : Realization of Putting Lateral Resistor to Individual Micro-Tip(Surfaces, Interfaces, and Films)
Effects of Donor Ion Doping on the Orientation and Ferroelectric Properties of Bismuth Titanate Thin Films
Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory
Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory
Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process

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