Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory

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概要

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• Thermally stable tungsten (W) bit-line process technology has been successfully integrated for capacitor over bit-line (COB)-type dynamic random-access memory (DRAM). Major parameters of the W bit-line process flow are demonstrated to be the Ti thickness, the silicidation temperature and the dopant concentration. The minimum contact resistance (${<}1000\,\Omega$) of the W bit-line into the p+ active region has been obtained by the silicidation of thin Ti (7 nm) at a high temperature (800°C) with the additional ion implantation of BF$_{2}^{+}$ after the contact formation. The effects of the process parameters were explained in terms of the agglomeration of the Ti silicide and dopant concentration in the silicon active region.

• 2000-06-15

著者

• LEE Won-Jun

  R&D Division, Hyundai MicroElectronics

• Rha Sa-kyun

  Department Of Materials Engineering Hanbat National University

• HONG Jeongeui

  R&D Division, Hyundai Microelectronics

• Lee Won-Jun

  R&D Division, Hyundai Microelectronics, 1, Hyangjeong-dong, Hungduk-gu, Cheongju, 361-725, Korea

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