Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-06-15

著者

• LEE Won-Jun

  R&D Division, Hyundai MicroElectronics

• Rha Sa-kyun

  Department Of Materials Engineering Taejon National University Of Technology

• Rha Sa-kyun

  Department Of Materials Engineering Hanbat National University

• Lee Won-jun

  R&d Division Hyundai Microelectronics

• HONG Jeongeui

  R&D Division, Hyundai Microelectronics

• Hong Jeongeui

  R&d Division Hyundai Microelectronics

関連論文

• Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH_2Cl_2 and O_3 as the Precursors
• Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
• Effects of the Annealing in Ar and H_2/Ar Ambients on the Microstructure and the Electrical Resistivity of the Copper Film Prepared by Chemical Vapor Deposition
• Integration of Chemical Vapor Deposition Aluminum and Physical Vapor Deposition Aluminum for Aluminum Plug Process of Sub-Quarter Micron Devices
• Effect of Underlayer on the Via Filling and the Microstructure of the Aluminum Film in Aluminum Plug Process
• Atomic Layer Deposition and Properties of Silicon Oxide Thin Films Using Alternating Exposures to SiH2Cl2 and O3
• Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition
• Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory
• Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory
• Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy
• Effect of Underlayer on the Via Filling and the Microstructure of the Aluminum Film in Aluminum Plug Process

もっと見る 閉じる

スポンサーリンク