Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition

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概要

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• Silicon dioxide thin films were deposited on p-type Si(100) substrates by neutral beam-assisted chemical vapor deposition (NBACVD) using SiH4 and neutralizing N2O gases at temperatures ranging from 350 to 450 °C. The growth rate of the SiO2 films deposited by NBACVD increased gradually with increasing deposition temperature. The refractive index of the deposited films is similar to the value of stoichiometric SiO2. The properties of the SiO2 films deposited by NBACVD at temperatures ranging from 350 to 450 °C, such as wet etch rate, surface morphology, and leakage current, were superior to those of the SiO2 films deposited by PECVD at 400 °C. For the growth of SiO2 films, NBACVD is expected to be applied to next-generation semiconductors with low process temperature requirements.

• 2008-12-25

著者

• LEE Jung

  School of Electrical Engineering and Computer Science, Seoul National University

• Rha Sa-kyun

  Department Of Materials Engineering Hanbat National University

• Lee Won-jun

  Department Of Advanced Materials Engineering Sejong University

• Lee Youn-Seoung

  Department of Communication Information Engineering, Hanbat National University, Daejeon 305-719, Korea

• Lee Won-Jun

  Department of Advanced Materials Engineering, Sejong University, Seoul 143-749, Korea

• Im Young

  School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea

• Lee Jung

  School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea

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