Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy

スポンサーリンク

概要

• 論文の詳細を見る

• We deposited interpoly-stacked dielectric films with Si3N4/SiO2/Si (ON) and SiO2/Si3N4/Si (NO) structures by the atomic layer deposition method. The multilayer structure of these films with the interfaces was investigated by O and N K-edge X-ray absorption spectroscopy, nondestructive method. The electrical properties of the films were also estimated in comparison with those of Si3N4 and SiO2 single layers. A few defects existed in the interface layer of both NO and ON structures. In particular, the oxynitride interface layer was detected in the NO multilayer. The ON stacked structure had a lower leakage current and higher breakdown voltage than the NO structure and had very similar electrical properties to those of the SiO2 single layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-08-25

著者

• Rha Sa-kyun

  Department Of Materials Engineering Hanbat National University

• Lee Won-jun

  Department Of Advanced Materials Engineering Sejong University

• Lee Youn-Seoung

  Department of Communication Information Engineering, Hanbat National University, Daejeon 305-719, Korea

• Kang Sung-Kyu

  Department of Materials Engineering, Hanbat National University, Daejeon 305-719, Korea

• Lee Won-Jun

  Department of Advanced Materials Engineering, Sejong University, Seoul 143-749, Korea

関連論文

• Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices
• Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH_2Cl_2 and O_3 as the Precursors
• Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
• Effects of the Annealing in Ar and H_2/Ar Ambients on the Microstructure and the Electrical Resistivity of the Copper Film Prepared by Chemical Vapor Deposition
• Effect of Underlayer on the Via Filling and the Microstructure of the Aluminum Film in Aluminum Plug Process
• Atomic Layer Deposition and Properties of Silicon Oxide Thin Films Using Alternating Exposures to SiH2Cl2 and O3
• Characteristics of Silicon Dioxide Film Deposited by Neutral Beam-Assisted Chemical Vapor Deposition
• Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory
• Thermally Stable Tungsten Bit-line Process Flow for the Capacitor Over Bit-line-Type Dynamic Random-Access Memory
• Study of Si3N4/SiO2/Si and SiO2/Si3N4/Si Multilayers by O and N K-Edge X-ray Absorption Spectroscopy
• Effect of Underlayer on the Via Filling and the Microstructure of the Aluminum Film in Aluminum Plug Process
• Effect of Indium--Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film
• Effect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film

もっと見る 閉じる

スポンサーリンク