Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park J
Hyundai Electronics Industries Co. Ltd. Kyoungki‐do Kor
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Lee J
Department Of Electronic Engineering National Chiao Tung University
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Jin
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Han Chang
Memory R&d Division Hyundai Electronics Industries Co.
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Lee J
National Nano Device Lab. Hsinchu Twn
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Lee Joo
Memory R&d Division Hyundai Electronics Industries Co.
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PARK Ji-Soo
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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LEE JooWan
Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Park Ji-soo
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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HAN Chang
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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