Park Jin | Semiconductor R&d Goldstar Electron Co. Ltd.
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概要
関連著者
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Park J
Hyundai Electronics Industries Co. Ltd. Kyoungki‐do Kor
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Park J
Yonsei Univ. Seoul Kor
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Park Jaehyuk
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
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Park J
豊橋技科大
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Seo Hun
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Yeon Cheong
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Yeon C
Devices And Materials Laboratory Lg Corporate Institute Of Technology
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Seo H
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporat
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Yasushiro
Tsukuba Research And Development Center Japan Texas Instruments
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Lee J
Department Of Electronic Engineering National Chiao Tung University
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Park Jin
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Han Chang
Memory R&d Division Hyundai Electronics Industries Co.
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Sung Nag
Process Team Hyundai Microelectronics Co. Ltd.
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Lee J
National Nano Device Lab. Hsinchu Twn
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Sohn Dong
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Sohn Dong
R&d Division Lg Semicon. Co. Ltd.
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Jeong T
Lg Electronics Inst. Technol. Seoul Kor
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Jeong Tae
Devices & Materials Laboratory Lg Electronics Institute Of Technology
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Lee Joo
Memory R&d Division Hyundai Electronics Industries Co.
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SAKURAI Takeaki
Institute of Scientific and Industrial Research, Osaka University
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PARK Jong
Institute of Scientific and Industrial Research, Osaka University
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NISHIYAMA Masayoshi
Central Workshop, Osaha University
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KOBAYASHI Hikaru
Institute of Scientific and Industrial Research, Osaka University
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PARK Ji-Soo
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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Cho I
Hynix Semiconductor Inc. Cheongju-si Kor
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Kim Myong
Devices & Materials Research Lab., LG Corporate Institute of Technology
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PARK Jeong
Devices and Materials Lab. , LG Corporate Institute of Technnology
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LEE JooWan
Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Kuribayashi Hiroki
Corporate R&d Laboratories Pioneer Corporation
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Nishiyama Masayoshi
Central Workshop Osaha University
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Sakurai T
Department Of Chemical Engineering Science Yokohama National University
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Park J
Electronic Device Group Korea Research Institute Of Standards And Science
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Sohn D
Applied Materials Korea Chungnam Kor
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Park Ji-soo
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Nishioka Y
Tsukuba Research And Development Center Japan Texas Instruments
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Kobayashi H
Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology
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Kobayashi Hikaru
Institute Of Scientific And Industrial Research Osaka University
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Park Jong
Institute Of Health And Sports Sciences University Of Tsukuba
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Sakurai Takeaki
Institute Of Applied Physics University Of Tsukuba
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Kobayashi H
Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology
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HAN Chang
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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Park J‐w
Sungkyunkwan Univ. Suwon Kor
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Kim J‐j
Univ. Tokyo Tokyo Jpn
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Lee Key
R&d Division Lg Semicon. Co. Ltd.
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CHO Ihl
R&D Division, LG Semicon. Co., Ltd.
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LEE Key
R&D Division, LG Semicon. Co., Ltd.
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CHOI Hong
R&D Division, LG Semicon. Co., Ltd.
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PARK Sang
R&D Division, LG Semicon. Co., Ltd.
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LEE Seok-Woo
R&D Division, LG Semicon. Co., Ltd.
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SUNG Nag
R&D Division, LG Semicon. Co., Ltd.
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LEE Hae
R&D Division, LG Semicon. Co., Ltd.
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AHN Jae-Gyung
R&D Division, LG Semicon. Co., Ltd.
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HUH Yun
R&D Division, LG Semicon. Co., Ltd.
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SOHN Dong
R&D Division, LG Semicon. Co., Ltd.
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KANG Dae
R&D Division, LG Semicon. Co., Ltd.
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PARK Jin
R&D Division, LG Semicon. Co., Ltd.
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AHN Byung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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KIM Jinhee
Electron Devices Laboratory, Korea Research Institute of Standards and Science
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SO Hye-Mi
Department of Physics, Chonbuk National University
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PARK Jong-Wan
Electronic Device Group, Korea Research Institute of Standards and Science
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WON Do-Jae
Korea Research Institute of Chemical Technology
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YUN Wan
Electronic Device Group, Korea Research Institute of Standards and Science
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KANG Yongku
Korea Research Institute of Chemical Technology
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LEE Changjin
Korea Research Institute of Chemical Technology
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KIM Ju-Jin
Department of Physics, Chonbuk National University
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Oh Jong
R&d Division Hyundai Micro Electronics Co. Ltd.
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Ahn B
Korea Advanced Inst. Sci. And Technol. Taejon Kor
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Kim M
Seoul National Univ. Seoul Kor
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Lee Hae
R&d Division Lg Semicon. Co. Ltd.
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Sohn D
Strategic Marheting. Applied Materials Korea
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Park Jeongwoo
Devices And Materials Laboratory Lg Corporate Institute Of Technology
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Lee Seok-woo
R&d Division Lg Semicon. Co. Ltd.
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Ahn Jae-gyung
R&d Division Lg Semicon. Co. Ltd.
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Huh Yun
R&d Division Lg Semicon. Co. Ltd.
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CHO Ihl
Process Team, Hyundai MicroElectronics Co., Ltd.
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OH Jong
Process Team, Hyundai MicroElectronics Co., Ltd.
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PARK Min
Process Team, Hyundai MicroElectronics Co., Ltd.
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SOHN Dong
Telecommunication Basic Research Lab.
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PARK Jin
Process Team, Hyundai MicroElectronics Co., Ltd.
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Choi W
Korea Advanced Inst. Sci. And Technol. Daejeon Kor
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Choi Woo
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Park J‐s
Hanyang Univ. Kyunggido Kor
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LEE Jeong
Devices and Materials Laboratory, LG Corporate Institute of Technology
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PARK Kyu
Devices and Materials Laboratory, LG Corporate Institute of Technology
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Lee Kwyro
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology
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Lee Kwyro
Department Of Eecs Korea Advanced Institute Of Science And Technology
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Park Sang
R&d Division Lg Semicon. Co. Ltd.
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Cho Ihl
Process Team Hyundai Microelectronics Co. Ltd.
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Park Jong
Electronic Device Group Korea Research Institute Of Standards And Science
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Choi Hong
R&d Division Lg Semicon. Co. Ltd.
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Lee Joo
Memory R&d Division Hynix Semiconductor Inc.
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Yun Wan
Electronic Device Group Korea Research Institute Of Standards And Science
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Kang Dae
R&d Division Lg Semicon. Co. Ltd.
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Park Kyu
Devices And Materials Laboratory Lg Corporate Institute Of Technology
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Lee Jeong
Devices And Materials Laboratory Lg Corporate Institute Of Technology
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Ahn Byung
Department Of Internal Medicine Hepatology Division Kangnam St. Mary's Hospital College Of Medi
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Kim Myong
Devices And Materials Lab. Lg Corporate Institute Of Technology
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Park Min
Process Team Hyundai Microelectronics Co. Ltd.
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YEON Cheong
Devices and Materials Lab. , LG Corporate Institute of Technnology
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KIM Myong
Devices and Materials Lab. , LG Corporate Institute of Technnology
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JEONG Tae
Devices and Materials Lab. , LG Corporate Institute of Technnology
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SEO Hun
Devices and Materials Lab. , LG Corporate Institute of Technnology
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AHN Byung
Department of Decontamination and Decommissioning, Korea Atomic Energy Research Institute
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Lee Kwyro
Department of EE, Korea Advanced Institute of Science and Technology (KAIST)
著作論文
- Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices
- Single-Electron Tunneling Behavior of Organic-Molecule-Based Electronic Device
- SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
- SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
- Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
- Characterization of Amorphous Phases of Ge_2Sb_2Te_5 Phase-Change Optical Recording Material on Their Crystallization Behavior
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
- Crystal Structure and Microstructure of Nitrogen-Doped Ge_2Sb_2Te_5 Thin Film
- Suppression of Jitter Bump GeSbTe Phase-Change Optical Disk
- Effects of F^+ Implantation on the Characteristics of Poly-Si Films and Low-Temperature n-ch Poly-Si Thin-Film Transistors
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System