Oh Jong | R&d Division Hyundai Micro Electronics Co. Ltd.
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概要
関連著者
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Yonsei Univ. Seoul Kor
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Oh Jong
R&d Division Hyundai Micro Electronics Co. Ltd.
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Sohn D
Strategic Marheting. Applied Materials Korea
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Sohn Dong
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Sohn Dong
R&d Division Lg Semicon. Co. Ltd.
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Park Jaehyuk
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Sohn D
Applied Materials Korea Chungnam Kor
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Park J
Hyundai Electronics Industries Co. Ltd. Kyoungki‐do Kor
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Han Chang
Memory R&d Division Hyundai Electronics Industries Co.
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SOHN Dong
R&D Division, LG Semicon. Co., Ltd.
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PARK Jin
R&D Division, LG Semicon. Co., Ltd.
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Sung Nag
Process Team Hyundai Microelectronics Co. Ltd.
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Cho I
Hynix Semiconductor Inc. Cheongju-si Kor
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CHO Ihl
Process Team, Hyundai MicroElectronics Co., Ltd.
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OH Jong
Process Team, Hyundai MicroElectronics Co., Ltd.
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PARK Min
Process Team, Hyundai MicroElectronics Co., Ltd.
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SOHN Dong
Telecommunication Basic Research Lab.
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PARK Jin
Process Team, Hyundai MicroElectronics Co., Ltd.
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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PARK Ji-Soo
R&D Division, Hyundai Micro Electronics Co., Ltd.
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BAE Jong-Uk
R&D Division, Hyundai Micro Electronics Co., Ltd.
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OH Jong
R&D Division, Hyundai Micro Electronics Co., Ltd.
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HAN Chang
R&D Division, Hyundai Micro Electronics Co., Ltd.
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Cho Ihl
Process Team Hyundai Microelectronics Co. Ltd.
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Bae Jong-uk
Inter-university Semiconductor Research Center (isrc) Seoul National University
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Park Min
Process Team Hyundai Microelectronics Co. Ltd.
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Shon Dong
R&D Division, Hyundai Micro Electronics Co., Ltd.
著作論文
- Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
- Improvement of Reverse Leakage Current by Fluorine Implantation in n^+/p Shallow Junctions Diffused from a Cobalt Silicide Layer