Sohn D | Strategic Marheting. Applied Materials Korea
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概要
関連著者
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Yonsei Univ. Seoul Kor
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Sohn D
Strategic Marheting. Applied Materials Korea
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Sohn Dong
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Sohn Dong
R&d Division Lg Semicon. Co. Ltd.
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Park Jaehyuk
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Sohn D
Applied Materials Korea Chungnam Kor
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Lee Byung
Process Development Department 3 Memory R&d Division Hyundai Electronics Co. Ltd.
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PARK Jin
Process Team, Hyundai MicroElectronics Co., Ltd.
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PARK Ji-Soo
Process Development Department 3, Memory R&D Division, Hyundai Electronics Co. Ltd.
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Kim Jac
Microprocessing Research Lab. School Of Chemical Engineering College Of Engineering Seoul National U
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Bae Jong-uk
Inter-university Semiconductor Research Center (isrc) Seoul National University
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Han Chang
Memory R&d Division Hyundai Electronics Industries Co.
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Byun J
Process Team R&d Division Lg Semicon.co.ltd.
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Byun Jeong
Ulsi Laboratory Of Lg Semicon Co. Ltd.
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Byun Jeong
Process Team, R&D Division, LG Semicon.Co.Ltd.,
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Byun Jeong
Process Team R&d Division Lg Semicon.co.ltd.
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SOHN Dong
R&D Division, LG Semicon. Co., Ltd.
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PARK Jin
R&D Division, LG Semicon. Co., Ltd.
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Oh Jong
R&d Division Hyundai Micro Electronics Co. Ltd.
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PARK Ji-Soo
R&D Division, Hyundai Micro Electronics Co., Ltd.
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BAE Jong-Uk
R&D Division, Hyundai Micro Electronics Co., Ltd.
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Sohn Dong
Process Team, R&D Division, LG Semicon.Co.Ltd.,
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Kim Jae
Process Team, R&D Division, LG Semicon.Co.Ltd.,
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Park J
Hyundai Electronics Industries Co. Ltd. Kyoungki‐do Kor
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Park Jin
Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Kim Yeong-Cheol
Department of Materials Engineering, Korea University of Technology and Education
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Kim Yeong-cheol
Department Of Materials Engineering Korea University Of Technology And Education
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Kim Yeong-cheol
Departmnent Of Materials Engineering Korea University Of Technology And Education
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Sung Nag
Process Team Hyundai Microelectronics Co. Ltd.
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BAR Jong-Uk
Inter-university Semiconductor Research Center (ISRC), Seoul National University
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SOHN Dong
Strategic Marheting. Applied Materials Korea
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PARK Ji-Soo
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
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KIM Jae
Microprocessing Research Lab. School of Chemical Engineering, College of Engineering, Seoul National
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Cho I
Hynix Semiconductor Inc. Cheongju-si Kor
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CHO Ihl
Process Team, Hyundai MicroElectronics Co., Ltd.
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OH Jong
Process Team, Hyundai MicroElectronics Co., Ltd.
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PARK Min
Process Team, Hyundai MicroElectronics Co., Ltd.
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SOHN Dong
Telecommunication Basic Research Lab.
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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HAN Chang
Process Development Department 3, Memory R&D Division, Hyundai Electronics Co. Ltd.
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SOHN Dong
Electronics and Telecommunications Research Laboratory
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BAE Jong-Uk
Process Development Department 3, Memory R&D Division, Hyundai Electronics Co. Ltd.
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OH Jong
R&D Division, Hyundai Micro Electronics Co., Ltd.
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HAN Chang
R&D Division, Hyundai Micro Electronics Co., Ltd.
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Kim Jac
Process Team, R&D Division, LG Semicon.Co.Ltd.,
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SOHN Dong-Kyun
Process Gr., Adv. Tech. Lab., LG Semicon. Co. Ltd.
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Cho Ihl
Process Team Hyundai Microelectronics Co. Ltd.
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Park Ji-soo
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park Min
Process Team Hyundai Microelectronics Co. Ltd.
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Kim Yeong-cheol
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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Shon Dong
R&D Division, Hyundai Micro Electronics Co., Ltd.
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HAN Chang
Memory R&D Center, Hyundai Electronics Industries Co.,Ltd.
著作論文
- A Study on Therlnal Stability of CoSi_2 Elnploying Novel Flne-Gralned PolycryStalline Silicon/CoSi_2/Si (001) System : Semiconductors
- Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
- Improvement of Gate Oxide Reliability for Direct Tungsten-Gate Using Denudation of WN_x
- Improvement of Reverse Leakage Current by Fluorine Implantation in n^+/p Shallow Junctions Diffused from a Cobalt Silicide Layer
- Suppression of Arsenic Loss by Phosphorus Co-Implantation in n^+/p Shallow Junction Diffused from a CoSi_2 Layer
- Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
- Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
- Formation of Low-Resistivity Gate Electrode Suitable for the Future Devices Using Clustered DCS-Wsix Polycide