Sohn Dong | R&d Division Lg Semicon. Co. Ltd.

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概要

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著作論文

A Study on Therlnal Stability of CoSi_2 Elnploying Novel Flne-Gralned PolycryStalline Silicon/CoSi_2/Si (001) System : Semiconductors
Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices
Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
Improvement of Gate Oxide Reliability for Direct Tungsten-Gate Using Denudation of WN_x
Improvement of Reverse Leakage Current by Fluorine Implantation in n^+/p Shallow Junctions Diffused from a Cobalt Silicide Layer
Suppression of Arsenic Loss by Phosphorus Co-Implantation in n^+/p Shallow Junction Diffused from a CoSi_2 Layer
Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
Formation of Low-Resistivity Gate Electrode Suitable for the Future Devices Using Clustered DCS-Wsix Polycide
Low-Temperature Crystallization of Amorphous Si Films by Metal Adsorption and Diffusion
New Crystallization Process of LPCVD a-Si Films below 530℃ Using Metal Adsorption Method

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