Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source

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This paper describes a new approach for low reverse leakage current in n+/p titanium-silicided shallow junctions(Xj=130nm)featuring mediated ion implantation of Ti-silicide(MITS).After formation of source/drain regions, Ti deposition and a 1st heat-treatment was used to form C-49 Ti-silicide.Subsequently, MITS arsenic ions were implanted and a 2nd heat-treatment carried out at 850℃ to form C-54 Ti-silicide. In spite of no additional drive-in process following to 2nd annealing, the implanted As diffused quite well into Si substrate and thus the reverse leakage current of the n+/p junctios was greatly reduced from 200 nA/cm^2 to 3 nA/cm^2. This technique satisfies low sheet resistance(<5Ω/sq.)and leakage current of Ti-silicided shallow junctions simultaneously. We conclude that C-49 TiSi_2 can be used as a diffusion source without causing any degradation of sub-quarter micron n-MOSFET's.
社団法人電子情報通信学会の論文
1998-07-24