SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Nishioka Yasushiro

  Texas Instruments Tsukuba R & D Center

• Nishioka Yasushiro

  Tsukuba Research And Development Center Japan Texas Instruments

• Park J

  Memory R&d Center Hyundai Electronics Industries Co. Ltd.

• Park Jin

  Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.

• Park Jin

  R&d Division Lg Semicon. Co. Ltd.

• SAKURAI Takeaki

  Institute of Scientific and Industrial Research, Osaka University

• PARK Jong

  Institute of Scientific and Industrial Research, Osaka University

• NISHIYAMA Masayoshi

  Central Workshop, Osaha University

• KOBAYASHI Hikaru

  Institute of Scientific and Industrial Research, Osaka University

• Park J

  Hyundai Microelectronics Co. Ltd. Chungju Kor

• Park Jin

  Semiconductor R&d Goldstar Electron Co. Ltd.

• Kuribayashi Hiroki

  Corporate R&d Laboratories Pioneer Corporation

• Nishiyama Masayoshi

  Central Workshop Osaha University

• Sakurai T

  Department Of Chemical Engineering Science Yokohama National University

• Park J

  Electronic Device Group Korea Research Institute Of Standards And Science

• Nishioka Y

  Tsukuba Research And Development Center Japan Texas Instruments

• Kobayashi H

  Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology

• Kobayashi Hikaru

  Institute Of Scientific And Industrial Research Osaka University

• Park Jong

  Institute Of Health And Sports Sciences University Of Tsukuba

• Sakurai Takeaki

  Institute Of Applied Physics University Of Tsukuba

• Kobayashi H

  Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology

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