Ferroelectric Bi_4Ti_3O_<12> Films on Si(100) with An Ultrathin Buffer Layer of Silicoll Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy

概要

論文の詳細を見る
Using pulsed-laser deposition, ferroelectric Bi_4Ti_3O_<12> (BiT) films were grown on Si(100) with and without an ultrathin buffer layer of silicon oxynitride (SiON), and the interface states were investigated using X-ray photoelectron spectroseopy. For both as-grown specimens, the additional oxidation of the interface Si was observed, and their thicknesses were almost identical Due to the postannealing at 700℃ ill an oxygen ambient, on the other hand, a large difference in the Si oxidation was observed between the two specimens The BiT films on Si(100) without the SiON buffer layer failed in preventing the significant development of the interfacial Si oxidation. On the contrary, it was clarified that the 1.3-nm-thick SiON buffer layers suppressed the additional oxidation to less than 3.5nm.
社団法人応用物理学会の論文
2001-09-30