Simultaneous Observation of SiO_2 Surface and SiO_2/Si Interface Using Self-Assembled-Monolayer Island

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SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
Scanning Thnneling Microscopy and Near Edge X-ray Absorption Fine Structure Studies of Adsorption of Trans-2-butene on Pd(110)
Nox Detection with Schottky Diodes and Heterojunction Structures (特集:化学センサの機能化,マイクロ化)
Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
Radiation Hardness of Epitaxial and Non-Epitaxial 6H-SiC MOS Capacitors
Characteristic Configuration of Cis-2-butene Molecule on Pd(110) Determined by Scanning Thnneling Microscopy
Scanning Tunneling Microscopy Study of Water Molecules on Pd(110) at Cryogenic Temperature
Single-Molecule Imaging and Repositioning of 1,3-Butadiene Adsorbed on Pd(110) Surface
Interfacial Layer in Thermally-grown Ultra thin Silicon Dioxides Measured by Grazing Incidence X-Ray Reflection
Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
Simultaneous Observation of SiO_2 Surface and SiO_2/Si Interface Using Self-Assembled-Monolayer Island
Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces
Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases
Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer : X-Ray Photoelectron Spectroscopic Measurements under Biases
Control of Grain Structure of Laser-Deposited (Ba, Sr)TiO_3 Films to Reduce Leakage Current ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
Comparative Study of Amorphous and Crystalline (Ba,Sr)TiO_3 Thin Films Deposited by Laser Ablation
Layer-by-Layer Etching of Si(111) Surface by Oxygen at Elevated Temperature
Pb Content Control in Sputtered PZT Films for FRAM Mass Production
Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O_3 Ferroelectric Thin Film
New Method for Observation of Interface States in the Semiconductor Band-Gap : XPS Measurements under Biases(Interfaces by various techniques)
Direct Spectroscopic Evidence of Bias-Induced Shifts of Semiconductor Band Edges for Metal-Insulator-Semiconductor Diodes
High Temperature STM Observation of Layer-by-Layer Etching of Si(111) with O_2 Flux
STM and Cluster Calculation Study of Segregated B on Si(001) Surface
Theoretical Estimation of the Energy Differences among OH-, F-, and H-terminations of the Si Surface
Hole Accumulation in SiO_2/Si_3N_4/SiO_2 Capacitors Prior to Dielectric Breakdown
X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors

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