X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors
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概要
- 論文の詳細を見る
We investigated total interface trap generation in epitaxial and nonepitaxial n-type 6H–SiC metal-oxide-semiconductor (MOS) capacitors by the photo-capacitance–voltage method (Jenq technique) for doses of low energy X-rays up to 20 Mrad (Si). Interface trap generation is low for both epitaxial and nonepitaxial SiC MOS capacitors and they show considerable radiation hardness, even without being specially processed to be radiation-hard. Characteristic features of the photo-capacitance–voltage curves and trapped charge are briefly discussed.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Katsube Teruaki
Graduate School Of Science And Engineering Saitama University
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Katsube Teruaki
Department Of Electronics Faculty Of Engineering Saitama University
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Nishioka Yasushiro
Texas Instruments Japan Limited Tsukuba Research And Development Center
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Yoshida Sadafumi
Graduate School Of Science And Engineering Saitama University
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De Vasconcelos
Departamento De Fisica Universidade Federal De Pernambuco Cidade Universitaria
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Da Silva
Departamento De Biologia Celular Universidade De Brasilia
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Silva Eronides
Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitaria, Recife-PE, 50670-901, Brazil
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Vasconcelos Elder
Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitaria, Recife-PE, 50670-901, Brazil
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Katsube Teruaki
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Urawa-shi, Saitama 338-8570, Japan
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Yoshida Sadafumi
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Urawa-shi, Saitama 338-8570, Japan
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