Yoshida Sadafumi | Graduate School Of Science And Engineering Saitama University
スポンサーリンク
概要
関連著者
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Katsube Teruaki
Graduate School Of Science And Engineering Saitama University
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Nishioka Yasushiro
Texas Instruments Japan Limited Tsukuba Research And Development Center
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Yoshida Sadafumi
Graduate School Of Science And Engineering Saitama University
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De Vasconcelos
Departamento De Fisica Universidade Federal De Pernambuco Cidade Universitaria
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Da Silva
Departamento De Biologia Celular Universidade De Brasilia
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Y
Taxas Instruments Japan Ltd. Tsukuba Research & Development Center
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Da Silva
Department Of Organic Chemistry Instituto De Quimica De Araraquara Sao Paulo State University (unesp
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Da Silva
Univ. Federal De Pernambuco Pe Bra
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Katsube T
Saitama Univ. Saitama Jpn
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DE VASCONCELOS
Departamento de Fisica, Universidade Federal de Pernambuco, Cidade Universitaria
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KATSUBE Teruaki
Graduate School of Science and Engineering, Saitama University
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YOSHIDA Sadafumi
Graduate School of Science and Engineering, Saitama University
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Katsube Teruaki
Department Of Electronics Faculty Of Engineering Saitama University
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De Vasconcelos
Univ. Federal De Pernambuco Pe Bra
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Da Silva
Departamento De Bioquimica Instituto De Quimica Universidade Federal Do Rio De Janeiro
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Nishioka Yasushiro
Texas Instruments Tsukuba Research & Development Center Ltd.
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Silva Eronides
Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitaria, Recife-PE, 50670-901, Brazil
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Vasconcelos Elder
Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitaria, Recife-PE, 50670-901, Brazil
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Katsube Teruaki
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Urawa-shi, Saitama 338-8570, Japan
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Yoshida Sadafumi
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Urawa-shi, Saitama 338-8570, Japan
著作論文
- Radiation Hardness of Epitaxial and Non-Epitaxial 6H-SiC MOS Capacitors
- X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors