Nishioka Yasushiro | Texas Instruments Japan Limited Tsukuba Research And Development Center

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概要

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著作論文

Nox Detection with Schottky Diodes and Heterojunction Structures (特集:化学センサの機能化,マイクロ化)
Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
Radiation Hardness of Epitaxial and Non-Epitaxial 6H-SiC MOS Capacitors
Interfacial Layer in Thermally-grown Ultra thin Silicon Dioxides Measured by Grazing Incidence X-Ray Reflection
Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
Simultaneous Observation of SiO_2 Surface and SiO_2/Si Interface Using Self-Assembled-Monolayer Island
Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces
Control of Grain Structure of Laser-Deposited (Ba, Sr)TiO_3 Films to Reduce Leakage Current ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
Layer-by-Layer Etching of Si(111) Surface by Oxygen at Elevated Temperature
High Temperature STM Observation of Layer-by-Layer Etching of Si(111) with O_2 Flux
STM and Cluster Calculation Study of Segregated B on Si(001) Surface
Theoretical Estimation of the Energy Differences among OH-, F-, and H-terminations of the Si Surface
Hole Accumulation in SiO_2/Si_3N_4/SiO_2 Capacitors Prior to Dielectric Breakdown
X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors

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