Layer-by-Layer Etching of Si(111) Surface by Oxygen at Elevated Temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
-
Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
-
Nishioka Yasushiro
Texas Instruments Tsukuba Research And Development Center
-
KOMEDA Tadahiro
Texas Instruments Tsukuba Research and Development Center Limited
-
Komeda Tadahiro
Texas Instruments Tsukuba R & D Center
-
Nishioka Yasushiro
Texas Instruments Japan Limited Tsukuba Research And Development Center
-
Nishioka Yasushiro
Texas Instruments, Tsukuba Research and Development Center
関連論文
- SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
- SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
- Scanning Thnneling Microscopy and Near Edge X-ray Absorption Fine Structure Studies of Adsorption of Trans-2-butene on Pd(110)
- Nox Detection with Schottky Diodes and Heterojunction Structures (特集:化学センサの機能化,マイクロ化)
- Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
- Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
- Radiation Hardness of Epitaxial and Non-Epitaxial 6H-SiC MOS Capacitors
- Characteristic Configuration of Cis-2-butene Molecule on Pd(110) Determined by Scanning Thnneling Microscopy
- Scanning Tunneling Microscopy Study of Water Molecules on Pd(110) at Cryogenic Temperature
- Single-Molecule Imaging and Repositioning of 1,3-Butadiene Adsorbed on Pd(110) Surface
- Interfacial Layer in Thermally-grown Ultra thin Silicon Dioxides Measured by Grazing Incidence X-Ray Reflection
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Simultaneous Observation of SiO_2 Surface and SiO_2/Si Interface Using Self-Assembled-Monolayer Island
- Spectroscopic and Theoretical Studies of Interface States at Ultrathin Oxide/Si Interfaces
- Interface States at Ultrathin Chemical Oxide/Silicon Interfaces Obtained from Measurements of XPS Spectra under Biases
- Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer : X-Ray Photoelectron Spectroscopic Measurements under Biases
- Control of Grain Structure of Laser-Deposited (Ba, Sr)TiO_3 Films to Reduce Leakage Current ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Comparative Study of Amorphous and Crystalline (Ba,Sr)TiO_3 Thin Films Deposited by Laser Ablation
- Layer-by-Layer Etching of Si(111) Surface by Oxygen at Elevated Temperature
- Pb Content Control in Sputtered PZT Films for FRAM Mass Production
- Stability Control of Composition of RF-Sputtered Pb(Zr, Ti)O_3 Ferroelectric Thin Film
- New Method for Observation of Interface States in the Semiconductor Band-Gap : XPS Measurements under Biases(Interfaces by various techniques)
- Direct Spectroscopic Evidence of Bias-Induced Shifts of Semiconductor Band Edges for Metal-Insulator-Semiconductor Diodes
- High Temperature STM Observation of Layer-by-Layer Etching of Si(111) with O_2 Flux
- STM and Cluster Calculation Study of Segregated B on Si(001) Surface
- Theoretical Estimation of the Energy Differences among OH-, F-, and H-terminations of the Si Surface
- Hole Accumulation in SiO_2/Si_3N_4/SiO_2 Capacitors Prior to Dielectric Breakdown
- X-Ray Radiation Response of Epitaxial and Nonepitaxial n-6H–SiC Metal-Oxide-Semiconductor Capacitors