Interface States for Si-Based MOS Devices with an Ultrathin Oxide Layer : X-Ray Photoelectron Spectroscopic Measurements under Biases
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Yasushiro
Tsukuba Research And Development Center Japan Texas Instruments
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Kobayashi Hidehiko
Faculty Of Engineering Yamanashi University
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Kobayashi Hikaru
Department Of Surgical Oncology Osaka City University Graduate School Of Medicine
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KOMEDA Tadahiro
Tsukuba R & D Center, Taxas Instruments
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MORI Toshio
Department of Agro-environmental Sciences, Faculty of Agriculture, Kyushu University
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YAMASHITA Yoshiyuki
Department of Chemical Engineering, Tohoku University
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NAKATO Yoshihiro
Department of Chemistry, Faculty of Engineering Science, and Research Center for Photoenergetics of
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Komeda Tadahiro
Riken (the Institute Of Physical And Chemical Research)
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Komeda Tadahiro
Texas Instruments Tsukuba R & D Center
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Komeda Tadahiro
Tsukuba Research And Development Center Texas Instruments
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Yamaguchi Yoh-ichi
Hoya Corporation
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Yamashita Yoshiyuki
Department Of Chemistry Faculty Of Engineering Science And Research Center For Photoenergetics Of Or
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Yamashita Yoshiyuki
Institute Of Information Sciences And Electronics University Of Tsukuba
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Yamashita Yoshiyuki
Department Of Chemical Engineering Tohoku University
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Kobayashi H
Nagaoka Univ. Technol. Niigata Jpn
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Nishioka Y
Tsukuba Research And Development Center Japan Texas Instruments
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Nakato Y
Division Of Chemistry Graduate School Of Engineering Science Osaka University
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Nakato Yoshihiro
Department Of Chemistry Graduate School Of Engineering Science And Research Center For Photoenergeti
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Kobayashi Hikaru
Department Of Hematology Nagano Red Cross Hospital
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Mori Toshio
Department Of Agro-environmental Sciences Faculty Of Agriculture Kyushu University
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Mori Toshio
Department Of Chemistry Faculty Of Engineering Science And Research Center For Photoenergetics Of Or
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