SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Yasushiro
Tsukuba Research And Development Center Japan Texas Instruments
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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SAKURAI Takeaki
Institute of Scientific and Industrial Research, Osaka University
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PARK Jong
Institute of Scientific and Industrial Research, Osaka University
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NISHIYAMA Masayoshi
Central Workshop, Osaha University
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KOBAYASHI Hikaru
Institute of Scientific and Industrial Research, Osaka University
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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Kuribayashi Hiroki
Corporate R&d Laboratories Pioneer Corporation
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Nishiyama Masayoshi
Central Workshop Osaha University
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Sakurai T
Department Of Chemical Engineering Science Yokohama National University
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Park J
Electronic Device Group Korea Research Institute Of Standards And Science
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Nishioka Y
Tsukuba Research And Development Center Japan Texas Instruments
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Kobayashi H
Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology
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Kobayashi Hikaru
Institute Of Scientific And Industrial Research Osaka University
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Park Jong
Institute Of Health And Sports Sciences University Of Tsukuba
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Sakurai Takeaki
Institute Of Applied Physics University Of Tsukuba
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Kobayashi H
Institute Of Scientific And Industrial Research Osaka University:crest Japan Science And Technology
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