New Equalizer to Improve Signal-to-Noise Ratio

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-03-30

著者

• Kuribayashi Hiroki

  Corporate R&d Laboratories Pioneer Corporation

• Yamamoto K

  Kaneka Corporation

• YAMAMOTO Kaoru

  Corporate R&D Laboratories, Pioneer Corporation

• MIYANABE Shogo

  Corporate R&D Laboratories, Pioneer Corporation

• Miyanabe Shogo

  Corporate Research And Development Laboratories Pioneer Electronic Corporation

• Yamamoto Kaoru

  Corporate Research And Development Laboratories Pioneer Electronic Corporation

• Kuribayashi Hiroki

  Corporate Research And Development Laboratories Pioneer Electronic Corporation

• Miyanabe Shogo

  Corporate R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima-shi, Saitama 350-2288, Japan

• Yamamoto Kaoru

  Corporate Research and Development Laboratories, Pioneer Electronic Corporation

• Yamamoto Kaoru

  Corporate R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima-shi, Saitama 350-2288, Japan

関連論文

• Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy : Surfaces, Interfaces, and Films
• The Fraction of Sp^3 Bonding in Carbon Thin Film Prepared Using Pulsed Laser Deposition
• SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
• SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
• High-resolution RBS analysis of Si-dielectrics interfaces
• Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Electronic and Structural Requirements for Metabolic Activation of Butylated Hydroxytoluene Analogs to Their Quinone Methides, Intermediates Responsible for Lung Toxicity in Mice
• METABOLIC ACTIVATION AND GLUTATHIONE CONJUGATION OF BUTYLATED HYDROXYTOLUENE
• IDENTIFICATION OF NEW METABOLITES OF BUTYLATED HYDROXYTOLUENE (BHT) IN RATS
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
• Spectral Characteristics of Thin-Film Stacked-Tandem Solar Modules
• Optimization of Device Design for Thin-Film Stacked Tandem Solar Modules in Terms of Outdoor Performance
• Challenge of Near-Field Recording beyond 50.4 Gbit/in^2
• Optical Recording Using High Numerical-Aperture Microlens by Plasma Etching
• Miniature Two-Axis Actuator for High-Data-Transfer-Rate Optical Data Storage System
• Cross-talk Canceller for Wobbling Signal
• Near-Field Optical Recording on a Pre-Grooved Phase-Change Disk in the Blue-Violet
• Optical Recording Using High Numerical-Aperture Microlens by Plasma Etching
• 25 GB Read-Only Disk System using the Two-Dimensional Equalizer
• Near-Field Phase-Change Optical Recording of 1.36 Numerical Aperture
• Optical Disk Recording Using a GaN Blue-Violet Laser Diode
• Signal Processing for 15/27 GB Read-Only Disk System
• New Equalizer to Improve Signal-to-Noise Ratio
• TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
• Optical Confinement Effect for below 5 μm Thin Film Poly-Si Solar Cell on Glass Substrate
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Cathode electron injection breakdown model and time dependent dielectric breakdown lifetime prediction in high-k/metal gate stack p-type metal-oxide-silicon field effect transistors
• Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1nm (Special issue: Solid state devices and materials)
• Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state
• Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
• Spectral Effects of a Single-Junction Amorphous Silicon Solar Cell on Outdoor Performance
• Analysis of the Crosstalk in a High-Density Optical Disc System
• Thin-Film Polycrystalline Si Solar Cell on Glass Substrate Fabricated by a Novel Low Temperature Process
• Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
• Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
• Asymmetric Ultrasonic Pulse Radiation Using Electromagnetic-Induction Transducer and PZT(Pb(Zr-Ti)O_3) Transducer with Wave Synthesis Method
• 0.8-Numerical-Aperture Two-Element Objective Lens for the Optical Disk
• The Path from a Digital Versatile Disc (DVD) using a Red Laser to a DVD using a Blue Laser
• Properties of Silicon-Oxygen Alloy Films Prepared from SiH_4+CO_2 Gas Mixture
• A New Type of Heterojunction a-Si Photodiode for Lensless Contact-Type Image Sensor
• Wide Optical-Gap a-Si:O:H Films Prepared from SiH_4-CO_2 Gas Mixture
• Fabrication of Piezoelectric Thin Film Resonators with Acoustic Quarter-Wave Multilayers
• 25 GB Read-Only Disk System using the Two-Dimensional Equalizer

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