Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-11-01

著者

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• Nakajima Kaoru

  Dep. Of Micro Engineering Kyoto Univ.

• NAKAJIMA Kiyomi

  National Institute for Mateirals Science

• CHIKYOW Toyohiro

  National Institute for Mateirals Science

• TORII Kazuyoshi

  Semiconductor Leading Edge Technologies, Inc.

• SHIRAISHI Kenji

  Institute of Physics, University of Tsukuba

• YAMADA Keisaku

  Waseda Univ.

• AKASAKA Yasushi

  Semiconductor Leading Edge Technologies Inc.

• ARIKADO Tsunetoshi

  Semiconductor Leading Edge Technologies Inc.

• KITAJIMA Hiroshi

  Semiconductor Leading Edge Technologies, Inc.

• Yamamoto K

  Univ. Of Tsukuba

• YAMADA Keisaku

  National Institute for Material Science

• KONNO Mitsuru

  Application Technology Department, Naka Customer Center, Hitachi Science Systems, Ltd.

• Yamamoto K

  Kaneka Corporation

• Arikado Tsunetoshi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Torii Kazuyoshi

  Semiconductor Leading Edge Technologies Inc.

• Konno Mitsuru

  Application Technology Department Naka Customer Center Hitachi Science Systems Ltd.

• Yamada Keisaku

  Graduate School Of Pure And Applied Sciences University Of Tsukuba

• Yamamoto K

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• Akasaka Yasushi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Chikyow Toyohiro

  National Inst. Materials Sci. Ibaraki Jpn

• Shiraishi Kenji

  Institute Of Physics University Of Tsukuba

• Kitajima Hiroshi

  Semiconductor Leading Edge Technologies Inc.

• Kitajima Hiroshi

  Semiconductor Leading Edge Technologies

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