Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
-
YASUHIRA Mitsuo
Semiconductor Leading Edge Technologies Inc.
-
ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
-
ARIKADO Tsunetoshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
-
Mineji Akira
Research Dept. 1 Semiconductor Leading Edge Technologies Inc.
-
YAMASHITA Koji
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
-
OOTSUKA Fumio
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
-
YASUHIRA Mitsuo
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
-
Arikado Tsunetoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
-
Yamashita Koji
Research Dept. 1 Semiconductor Leading Edge Technologies Inc.
-
YAMASHITA KOJI
Research and Technology Development Division, HSP company
関連論文
- High Quality Hf-Silicate Gate Dielectrics Fabrication by Atomic Layer Deposition (ALD) Technology
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
- Microbicidal Effect of Weak Acid Hypochlorous Solution on Various Microorganisms
- Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-$k$ Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain
- Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor