Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks

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Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries
Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing
Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
Role of Nitrogen Incorporation into Hf-Based High-$k$ Gate Dielectrics for Termination of Local Current Leakage Paths
Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor

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