YASUHIRA Mitsuo | Semiconductor Leading Edge Technologies Inc.
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概要
関連著者
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YASUHIRA Mitsuo
Semiconductor Leading Edge Technologies Inc.
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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HOSHI Takeshi
Semiconductor Leading Edge Technologies Inc.
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OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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MIYAGAWA Kazuhiro
Semiconductor Leading Edge Technologies Inc.
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WATANABE Yasuhiko
Semiconductor Leading Edge Technologies Inc.
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OZAKI Hiroji
Semiconductor Leading Edge Technologies Inc.
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TOMIKAWA Mitsuhiro
Semiconductor Leading Edge Technologies Inc.
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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Honda Hiroyuki
Graduate School Of Engineering Nagoya University
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ARIKADO Tsunetoshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
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Mineji Akira
Research Dept. 1 Semiconductor Leading Edge Technologies Inc.
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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YAMASHITA Koji
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
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OOTSUKA Fumio
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
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YASUHIRA Mitsuo
Research Dept. 1, Semiconductor Leading Edge Technologies, Inc.
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Arikado Tsunetoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Yamashita Koji
Research Dept. 1 Semiconductor Leading Edge Technologies Inc.
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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YAMASHITA KOJI
Research and Technology Development Division, HSP company
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Hoshi Takeshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tomikawa Mitsuhiro
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yasuhira Mitsuo
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yasuhira Mitsuo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ozaki Hiroji
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Improvements of Electrical Properties with Reduced Transient-Enhanced-Diffusion for 65nm-node CMOS Technology using Flash Lamp Annealing
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor