Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
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概要
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In this paper, the effects of boron and fluorine in the SiO2/Si interface region with the optimized nitrogen profile are described. Fluorine in the interface region has been found to terminate the interface states and improve negative bias temperature instability (NBTI). However, fluorine enhances the boron penetration. The ideal nitrogen profile has been achieved in order to suppress NBTI characteristics by applying the SiN/SiO2 stack structure.
- 2004-04-15
著者
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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HOSHI Takeshi
Semiconductor Leading Edge Technologies Inc.
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YASUHIRA Mitsuo
Semiconductor Leading Edge Technologies Inc.
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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OZAKI Hiroji
Semiconductor Leading Edge Technologies Inc.
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TOMIKAWA Mitsuhiro
Semiconductor Leading Edge Technologies Inc.
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Hoshi Takeshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tomikawa Mitsuhiro
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yasuhira Mitsuo
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ozaki Hiroji
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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