Sasaki Takaoki | Semiconductor Leading Edge Technologies (selete) Aist
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概要
関連著者
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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YASUHIRA Mitsuo
Semiconductor Leading Edge Technologies Inc.
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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HOSHI Takeshi
Semiconductor Leading Edge Technologies Inc.
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OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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MIYAGAWA Kazuhiro
Semiconductor Leading Edge Technologies Inc.
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WATANABE Yasuhiko
Semiconductor Leading Edge Technologies Inc.
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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岡田 健治
半導体MIRAI-ASET
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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岡田 健治
松下電器産業(株)
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OZAKI Hiroji
Semiconductor Leading Edge Technologies Inc.
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TOMIKAWA Mitsuhiro
Semiconductor Leading Edge Technologies Inc.
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ITO Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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OKADA Kenji
MIRAI-ASET, AIST
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HORIKAWA Tsuyoshi
MIRAI-ASRC, AIST
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TAMURA Yasuyuki
Semiconductor Leading Edge Technologies (Selete), AIST
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AOYAMA Tomonori
Semiconductor Leading Edge Technologies (Selete), AIST
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Honda Hiroyuki
Graduate School Of Engineering Nagoya University
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Hayashi T
Mirai-asrc-aist
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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Muto Akiyoshi
Semiconductor Leading Edge Technologies Inc.
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Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Tamura Yasuyuki
Semiconductor Leading Edge Technologies (selete) Aist
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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Uraoka Yukiharu
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Aoyama Tomonori
Semiconductor Company Toshiba Corporation
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Aoyama Tomonori
Semiconductor Leading Edge Technologies (selete) Aist
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Toriumi Akira
Mirai-asrc Aist
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Horikawa Tsuyoshi
Mirai-asrc Aist
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Kawahara Takaaki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Maeda Takeshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Hoshi Takeshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Uraoka Yukiharu
Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Sasaki Takaoki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tomikawa Mitsuhiro
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Muto Akiyoshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Yasuhira Mitsuo
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Yasuhira Mitsuo
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Ito Hiroyuki
Semiconductor Leading Edge Technologies, Inc., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ozaki Hiroji
Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
著作論文
- Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO_2 Metal Gate Stacks
- Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO_2 Metal Gate Stacks
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
- Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor