岡田 健治 | 松下電器産業(株)
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概要
関連著者
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岡田 健治
半導体MIRAI-ASET
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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岡田 健治
松下電器産業(株)
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OKADA Kenji
MIRAI-ASET, AIST
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi A
Univ. Tokyo Tokyo Jpn
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Toriumi Akira
The Authors Are With Advanced Lsi Technology Laboratory Toshiba Corporation:presently With The Depar
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Ota Hiroyuki
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Toriumi Akira
Mirai-asrc Aist
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Ota Hiroyuki
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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Nabatame Toshihide
Mirai-association Of Super-advanced Electronics Technologies (mirai-aset) National Institute Of Adva
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Nabatame T
Aist Tsukuba Jpn
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Nabatame Toshihide
Mirai-aset Advanced Industrial Science And Technology (aist)
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Nabatame Toshihide
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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HORIKAWA Tsuyoshi
MIRAI-ASRC, AIST
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Hayashi T
Mirai-asrc-aist
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Horikawa Tsuyoshi
Mirai Project Association Of Super-advanced Electronics Technology (aset)
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OKADA Kenji
Micro Computer Division, Matsushita Electronics Corporation
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Horikawa Tsuyoshi
Mirai-asrc Aist
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太田 裕之
半導体MIRAIプロジェクト-ナノ電子デバイス研究センター
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岩本 邦彦
半導体MIRAI-ASET
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生田目 俊秀
半導体MIRAI-ASET
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鳥海 明
半導体MIRAI-産総研ASRC
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安田 直樹
半導体MIRAI-ASET
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鳥海 明
半導体mirai-産総研asrc:東京大学工学部マテリアル工学科
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太田 裕之
産業技術総合研究所ナノ電子デバイス研究センター
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鳥海 明
東京大学
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生田目 俊秀
(株)半導体先端テクノロジーズ(selete):(現)(独)物質・材料研究機構
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Toriumi Akira
Advanced Lsi Technology Toshiba Corporation
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MIZUBAYASHI Wataru
MIRAI-ASRC
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KADOSHIMA Masaru
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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IWAMOTO Kunihiko
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Kadoshima Masaru
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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OGAWA Arito
MIRAI-ASET
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Satake Hideki
Mirai-aset Aist
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Iwamoto Kunihiko
Mirai-aset
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Mizubayashi Wataru
MIRAI Project, Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Sciences and Technology (AIST), Tsukuba West, Tsukuba, Ibaraki 305-8569, Japan
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太田 裕之
半導体MIRAI-産総研ASRC
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Ogawa Arito
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, Japan
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鳥海 明
半導体MIRAI-産総研,東大工
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水林 亘
半導体MIRAIプロジェクト-ナノ電子デバイス研究センター
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右田 真司
半導体MIRAIプロジェクト-ナノ電子デバイス研究センター
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平野 晃人
半導体MIRAI-ASET
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渡邉 幸宗
半導体MIRAI-ASET
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秋山 浩二
半導体MIRAI-ASET
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佐竹 秀喜
半導体MIRAIプロジェクト-ASET
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堀川 剛
半導体MIRAI-産総研ASRC
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Yasuda Naoki
Mirai-aset Aist
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右田 真司
産業技術総合研究所ナノ電子デバイス研究センター
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Toriumi Akira
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Ono Kouichi
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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Eriguchi Koji
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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Tominaga Koji
Mirai-aset Aist
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Sasaki Takaoki
Semiconductor Leading Edge Technologies Inc.
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Sasaki Takaoki
Semiconductor Leading Edge Technologies (selete) Aist
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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OOTSUKA Fumio
Semiconductor Leading Edge Technologies Inc.
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TAMURA Yasuyuki
Semiconductor Leading Edge Technologies (Selete), AIST
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AOYAMA Tomonori
Semiconductor Leading Edge Technologies (Selete), AIST
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HISAMATSU Hirokazu
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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YAMAMOTO Katsuhiko
MIRAI-ASET, AIST
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Hisamatsu Hirokazu
Mirai-aset Aist
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Hamada Daisuke
Department Of Aeronautics And Astronautics Graduate School Of Engineering Kyoto University
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Sinclair Robert
Materials Science And Engineering Stanford University
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ERIGUCHI Koji
Graduate School of Engineering, Kyoto University
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HAMADA Daisuke
Graduate School of Engineering, Kyoto University
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KAMEI Masayuki
Graduate School of Engineering, Kyoto University
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ONO Kouichi
Graduate School of Engineering, Kyoto University
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Toriumi Akira
Department Of Materials Engineering The University Of Tokyo
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川崎 里子
松下電器産業(株)
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KOUZAKI Takashi
Matsushita Technoresearch Inc.
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OKADA Kenji
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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UDAGAWA Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Kamei Masayuki
Graduate School Of Engineering Kyoto University
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OKADA Kenji
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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KAWASAKI Satoko
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
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Tamura Yasuyuki
Semiconductor Leading Edge Technologies (selete) Aist
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Kawasaki Satoko
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Aoyama Tomonori
Semiconductor Company Toshiba Corporation
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Aoyama Tomonori
Semiconductor Leading Edge Technologies (selete) Aist
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Udagawa Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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右田 真司
(独)産業技術総合研究所ナノエレクトロニクス研究部門
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Yamamoto Katsuhiko
Mirai-aset Aist
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右田 真司
半導体mirai-産総研asrc
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水林 亘
半導体MIRAI-産総研ASRC
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NIWA Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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Tominaga Koji
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Hamada Daisuke
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Yasuda Naoki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET), AIST Tsukuba SCR Building, Tsukuba, Ibaraki 305-8569, Japan
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Eriguchi Koji
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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水林 亘
産業技術総合研究所
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右田 真司
産業技術総合研究所 ナノエレクトロニクス研究部門
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右田 真司
産業技術総合研究所グリーンナノエレクトロニクスセンター
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水林 亘
産業技術総合研究所グリーンナノエレクトロニクスセンター
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Ono Kouichi
Graduate School of Engineering Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
著作論文
- High-k MOSFETに固有な移動度劣化機構の提案(IEDM(先端CMOSデバイス・プロセス技術))
- キャリア分離法を用いた high-k stack ゲート絶縁膜のキャリア伝導及び絶縁性劣化機構の解析
- Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
- Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
- Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
- Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- 極薄ゲート酸化膜におけるストレス誘起リーフ電流と絶縁破壊
- Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
- An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current
- Extended Time Dependent Dielectric Breakdown Model Based on Anomalous Gate Area Dependence of Lifetime in Ultra Thin Silicon Dioxides
- Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon Dioxides
- New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides