Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon Dioxides
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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岡田 健治
半導体MIRAI-ASET
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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岡田 健治
松下電器産業(株)
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OKADA Kenji
Micro Computer Division, Matsushita Electronics Corporation
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