New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides

スポンサーリンク

概要

• 論文の詳細を見る
• 1995-08-21

著者

• 岡田 健治

  半導体MIRAI-ASET

• Okada K

  Yamaguchi Univ. Yamaguchi Jpn

• 岡田 健治

  松下電器産業(株)

• OKADA Kenji

  Micro Computer Division, Matsushita Electronics Corporation

• KAWASAKI Satoko

  Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.

• Kawasaki Satoko

  Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.

関連論文

• High-k MOSFETに固有な移動度劣化機構の提案(IEDM(先端CMOSデバイス・プロセス技術))
• キャリア分離法を用いた high-k stack ゲート絶縁膜のキャリア伝導及び絶縁性劣化機構の解析
• Observation of Parallel and Perpendicular Propagations of Ion Sound Waves in a Linear Turbulently Heated Plasma
• Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
• Ablative Acceleration of Pellet Shells Irradiated by External Soft X-ray Sources
• Excitonic Structure of CuGaS_Se_ and CuAlS_Se_
• Biexciton Luminescence from GaN Epitaxial Layers
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Preheating Energy in a Soft-X-Ray-Accelerated Foil
• Efficient Laser Absorption in Low Density Foam Target
• Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
• Effect of Helium Gas Pressure on X-Ray Mask Heating during Synchrotron Radiation Exposure
• Wafer Temperature Measurement and X-Ray Mask Temperature Evaluation in Synchrotron Radiation Lithography
• Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
• Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
• A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
• 極薄ゲート酸化膜におけるストレス誘起リーフ電流と絶縁破壊
• Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
• An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current
• Extended Time Dependent Dielectric Breakdown Model Based on Anomalous Gate Area Dependence of Lifetime in Ultra Thin Silicon Dioxides
• Extended TDDB Model Based on Anomalous Gate Area Dependence in Ultra Thin Silicon Dioxides
• New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides

もっと見る 閉じる

スポンサーリンク