Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
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概要
- 論文の詳細を見る
Conventional wet cleaning and ultrahigh vacuum (UHV) heated cleaning prior to thermal oxidation were compared with respect to their effects on extremely thin SiO_2/Si(001) interface roughness. Atomically flat SiO_2/Si(001) interfaces were realized by preparing the Si(001) reconstructed surface in UHV followed by thermal oxidation. In contrast to conventional wet cleaning, this planarization is significant in the range of oxide thickness (T_<ox>) <9 nm which is an important thickness for future gate oxides. As for the conventional wet-cleaned surfaces, maxi-mum roughness of the interface was observed at T_<ox>〓4 nm which corresponds to the "initial oxide thickness" which appeared in the oxide growth kinetics.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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岡田 健治
半導体MIRAI-ASET
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Okada K
Yamaguchi Univ. Yamaguchi Jpn
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岡田 健治
松下電器産業(株)
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Sinclair Robert
Materials Science And Engineering Stanford University
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KOUZAKI Takashi
Matsushita Technoresearch Inc.
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OKADA Kenji
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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UDAGAWA Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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Udagawa Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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NIWA Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
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