Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
スポンサーリンク
概要
- 論文の詳細を見る
The initial stages of the thermal (600℃) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O_2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Niwa M
Matsushita Electronics Corp. Kyoto Jpn
-
Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
-
Niwa M
Department Of Materials Science And Engineering Tokyo Denki University
-
Niwa Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
-
UDAGAWA Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co., Ltd.
-
SUMITA Isao
Matsushita Research Institute Tokyo, Inc.
-
Sumita I
Matsushita Research Institute Tokyo Inc.
-
Sumita Isao
Matsushita Research Institute Tokyo Inc.
-
Udagawa M
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
-
Udagawa Masaharu
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
関連論文
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- SiO_2/Si Interfaces Studied by STM and HRTEM(II) : Etching and Deposition Technology
- SiO_2/Si Interfaces Studied by STM and HRTEM (II)
- Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
- Atomic-scale Characterization and Control of the HfO_2/Si(001) Interface
- Atomic-Order Planarization of Ultrathin SiO_2/Si(001) Interfaces
- Scanning Tunneling Microscope Observation of Si(111) δ7×7 Formed by Si Deposition
- Atomic-Scale Planarization of 6-Inch Si(001) Substrate by UHV Heating
- SiO_2/Si Interfaces Studied by STM
- 異方的電荷を持った層状XY格子モデルにおける超伝導相転移の三重臨界点II
- 異方的電荷を持った層状XY格子モデルにおける超伝導相転移の三重臨界点I
- 強磁性体-超伝導体-強磁性体接合を利用した新しい単一磁束量子デバイスの考案
- Novel Fabrication Method of Si Nanostructures Using Atomic Force Microscope (AFM) Field-Enhanced Oxidation and Anisotropic Wet Chemical Etching
- Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
- Fabrication of Silicon Quantum Wires and Dots (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Local Ordering and Lateral Growth of Initial Thermal Oxide of Si(001)
- The Initial Stages of the Thermal Oxidation of Si(001)2×1 Surface Studied by Scanning Tunneling Microscopy
- 異方的電荷を持った層状XY格子モデルの双対変換II
- 異方的電荷を持った層状XY格子モデルの双対変換I