SiO_2/Si Interfaces Studied by STM
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概要
- 論文の詳細を見る
Topologies of SiO_2/Si(100) interfaces grown by several oxidation conditions were successfully observed using a scanning tunneling microscope (STM) in air with a wider area than ever reported. Hydrogen terminated Si surfaces were prepared by means of HF dipping and were checked by XPS and AES. The interfaces showed ripplelike corrugations that consisted of steps caused by the misorientation of the silicon single crystal. The large step height was produced by wet oxidation. Morphologies of the interfaces measured by STM were consistent with the observation by TEM.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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IWASAKI Hiroshi
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Niwa M
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Niwa Masaaki
Semiconductor Research Center Matsushita Electric Ind. Co. Ltd.
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Iwasaki Hiroshi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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