Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-02-15

著者

• Niwa M

  Matsushita Electronics Corp. Kyoto Jpn

• NAGATOMI Takaharu

  Department of Material and Life Science, Graduate School of Engineering, Osaka University

• Harada Y

  Univ. Tokyo Tokyo Jpn

• Harada Yoshinao

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Harada Yoshinao

  Ulsi Process Technology Development Center Matsushita Electronics Corp.

• NIWA Masaaki

  ULSI Process Technology Development Center, Matsushita Electronics Corp.

• NAGATOMI Takaharu

  Faculty of Engineering, Osaka University

• SHIMIZU Ryuichi

  Faculty of Engineering, Osaka University

• Niwa M

  Ulsi Process Technology Development Center Matsushita Electronics Corp.

• Niwa M

  Department Of Materials Science And Engineering Tokyo Denki University

• Niwa Masaaki

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.

• Harada Y

  Life Culture Department Seitoku University

• Souda R

  National Institute For Research In Inorganic Materials

• Shimizu R

  Department Of Information Science Osaka Institute Of Technology

• Shimizu R

  Osaka Univ. Osaka Jpn

• Nagatomi T

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Shimizu Ryuichi

  Faculty Of Engineering Osaka University

• Nagatomo Takaharu

  Faculty of Engineering, Osaka University

• Shimizu Ryuichi

  Department of Information Processing, Osaka Institute of Technology

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