Selective Dry Etching of HfO_2 in CF_4 and Cl_2/HBr-Based Chemistries

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Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
Ni-Salicided Poly-Si/poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs
Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma

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